SSM3K36MFV,L3F

Toshiba Semiconductor and Storage

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SSM3K36MFV,L3F

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Package:

VESM

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MOSFET N-CH 20V 500MA VESM

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	1.23 nC @ 4 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	630mOhm @ 200mA, 5V
Supplier Device Package	VESM
Vgs(th) (Max) @ Id	1V @ 1mA
Drain to Source Voltage (Vdss)	20 V
Series	U-MOSIII
Power Dissipation (Max)	150mW (Ta)
Package / Case	SOT-723
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	500mA (Ta)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 5V
Package	Tape & Reel (TR)
Base Product Number	SSM3K36