SSM6J512NU,LF

Toshiba Semiconductor and Storage

Product No:

SSM6J512NU,LF

Manufacturer:

Package:

6-UDFNB (2x2)

Batch:

Datasheet:

Description:

MOSFET P-CH 12V 10A 6UDFNB

Quantity:

Delivery:

Payment:

In Stock : 31045

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs	19.5 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	16.2mOhm @ 4A, 8V
Supplier Device Package	6-UDFNB (2x2)
Vgs(th) (Max) @ Id	1V @ 1mA
Drain to Source Voltage (Vdss)	12 V
Series	U-MOSVII
Power Dissipation (Max)	1.25W (Ta)
Package / Case	6-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 8V
Package	Tape & Reel (TR)
Base Product Number	SSM6J512