SSM6N57NU,LF

Toshiba Semiconductor and Storage

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SSM6N57NU,LF

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Package:

6-µDFN (2x2)

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Description:

MOSFET 2N-CH 30V 4A UDFN6

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Operating Temperature	150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	310pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	46mOhm @ 2A, 4.5V
Supplier Device Package	6-µDFN (2x2)
Vgs(th) (Max) @ Id	1V @ 1mA
Drain to Source Voltage (Vdss)	30V
Series	-
Package / Case	6-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Power - Max	1W
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	4A
Package	Tape & Reel (TR)
Base Product Number	SSM6N57