SSM6N813R,LXHF

Toshiba Semiconductor and Storage

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SSM6N813R,LXHF

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Package:

6-TSOP-F

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Description:

AUTO AEC-Q SS MOS DUAL N-CH LOW

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Operating Temperature	175°C
FET Feature	Logic Level Gate, 4.5V Drive
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	242pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	3.6nC @ 4.5V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	112mOhm @ 3.5A, 10V
Supplier Device Package	6-TSOP-F
Vgs(th) (Max) @ Id	2.5V @ 100µA
Drain to Source Voltage (Vdss)	100V
Series	Automotive, AEC-Q101
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Power - Max	1.5W (Ta)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)
Package	Tape & Reel (TR)
Base Product Number	SSM6N813