TK10P50W,RQ

Toshiba Semiconductor and Storage

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TK10P50W,RQ

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DPAK

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Description:

PB-F POWER MOSFET TRANSISTOR DPA

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	430mOhm @ 4.9A, 10V
Supplier Device Package	DPAK
Vgs(th) (Max) @ Id	3.7V @ 500µA
Drain to Source Voltage (Vdss)	500 V
Series	DTMOSIV
Power Dissipation (Max)	80W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	9.7A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)