TK20E60W5,S1VX

Toshiba Semiconductor and Storage

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TK20E60W5,S1VX

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Package:

TO-220

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Description:

X35 PB-F POWER MOSFET TRANSISTOR

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	175mOhm @ 10A, 10V
Supplier Device Package	TO-220
Vgs(th) (Max) @ Id	4.5V @ 1mA
Drain to Source Voltage (Vdss)	600 V
Series	-
Power Dissipation (Max)	165W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK20E60