TK6R7P06PL,RQ

Toshiba Semiconductor and Storage

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TK6R7P06PL,RQ

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DPAK

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MOSFET N-CHANNEL 60V 46A DPAK

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1990 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	6.7mOhm @ 23A, 10V
Supplier Device Package	DPAK
Vgs(th) (Max) @ Id	2.5V @ 300µA
Drain to Source Voltage (Vdss)	60 V
Series	U-MOSIX-H
Power Dissipation (Max)	66W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	46A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TK6R7P06