TPH1R104PB,L1XHQ

Toshiba Semiconductor and Storage

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TPH1R104PB,L1XHQ

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Package:

8-SOP Advance (5x5)

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Description:

MOSFET N-CH 40V 120A 8SOP

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.14mOhm @ 60A, 10V
Supplier Device Package	8-SOP Advance (5x5)
Vgs(th) (Max) @ Id	3V @ 500µA
Drain to Source Voltage (Vdss)	40 V
Series	U-MOSIX-H
Power Dissipation (Max)	960mW (Ta), 132W (Tc)
Package / Case	8-SOIC (0.197", 5.00mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	120A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPH1R104