UPA2810T1L-E1-AY

Renesas Electronics America Inc

Product No:

UPA2810T1L-E1-AY

Manufacturer:

Package:

8-DFN3333 (3.3x3.3)

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Datasheet:

Description:

MOSFET P-CH 30V 13A 8DFN

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	12mOhm @ 13A, 10V
Supplier Device Package	8-DFN3333 (3.3x3.3)
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	1.5W (Ta)
Package / Case	8-VDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	13A (Ta)
Package	Bulk