18N10

Goford Semiconductor

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18N10

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TO-252 (DPAK)

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Description:

N100V,RD(MAX)<53M@10V,RD(MAX)<63

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1318 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	53mOhm @ 10A, 10V
Supplier Device Package	TO-252 (DPAK)
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	62.5W
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	25A
Vgs (Max)	±20V
Package	Tape & Reel (TR)