APT106N60B2C6

Microchip Technology

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APT106N60B2C6

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Package:

T-MAX™ [B2]

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Description:

MOSFET N-CH 600V 106A T-MAX

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	308 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	35mOhm @ 53A, 10V
Supplier Device Package	T-MAX™ [B2]
Vgs(th) (Max) @ Id	3.5V @ 3.4mA
Drain to Source Voltage (Vdss)	600 V
Series	CoolMOS™
Power Dissipation (Max)	833W (Tc)
Package / Case	TO-247-3 Variant
Technology	MOSFET (Metal Oxide)
Mfr	Microchip Technology
Current - Continuous Drain (Id) @ 25°C	106A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	APT106