APT8024B2LLG

Microsemi Corporation

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APT8024B2LLG

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Package:

T-MAX™ [B2]

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Description:

MOSFET N-CH 800V 31A T-MAX

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	240mOhm @ 15.5A, 10V
Supplier Device Package	T-MAX™ [B2]
Vgs(th) (Max) @ Id	5V @ 2.5mA
Drain to Source Voltage (Vdss)	800 V
Series	POWER MOS 7®
Power Dissipation (Max)	565W (Tc)
Package / Case	TO-247-3 Variant
Technology	MOSFET (Metal Oxide)
Mfr	Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube