BSB012N03LX3G

Infineon Technologies

Product No:

BSB012N03LX3G

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Package:

MG-WDSON-2, CanPAK M™

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Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	16900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	169 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.2mOhm @ 30A, 10V
Supplier Device Package	MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id	2.2V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	OptiMOS™
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Package / Case	3-WDSON
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	39A (Ta), 180A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk