BSP316PH6327XTSA1

Infineon Technologies

Product No:

BSP316PH6327XTSA1

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Package:

PG-SOT223-4

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Description:

MOSFET P-CH 100V 680MA SOT223-4

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	146 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	6.4 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.8Ohm @ 680mA, 10V
Supplier Device Package	PG-SOT223-4
Vgs(th) (Max) @ Id	2V @ 170µA
Drain to Source Voltage (Vdss)	100 V
Series	SIPMOS®
Power Dissipation (Max)	1.8W (Ta)
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	680mA (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	BSP316