BUK9Y11-80EX

NXP Semiconductors

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BUK9Y11-80EX

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Package:

LFPAK56, Power-SO8

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Description:

NEXPERIA BUK9Y11 - TRANSISTOR >3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6506 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	44.2 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	10mOhm @ 25A, 10V
Supplier Device Package	LFPAK56, Power-SO8
Vgs(th) (Max) @ Id	2.1V @ 1mA
Drain to Source Voltage (Vdss)	80 V
Series	TrenchMOS™
Power Dissipation (Max)	194W (Tc)
Package / Case	SC-100, SOT-669
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	84A (Tc)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	5V
Package	Bulk