FDP12N50

Fairchild Semiconductor

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FDP12N50

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Package:

TO-220-3

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Description:

MOSFET N-CH 500V 11.5A TO220-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1315 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	650mOhm @ 6A, 10V
Supplier Device Package	TO-220-3
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	500 V
Series	UniFET™
Power Dissipation (Max)	165W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	11.5A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk