FQB4N20TM

Fairchild Semiconductor

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FQB4N20TM

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D2PAK (TO-263)

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Description:

MOSFET N-CH 200V 3.6A D2PAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	6.5 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1.8A, 10V
Supplier Device Package	D2PAK (TO-263)
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	QFET®
Power Dissipation (Max)	3.13W (Ta), 45W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk