FQL50N40

Fairchild Semiconductor

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FQL50N40

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HPM F2

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Description:

MOSFET N-CH 400V 50A TO264-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	210 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	75mOhm @ 25A, 10V
Supplier Device Package	HPM F2
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	400 V
Series	QFET®
Power Dissipation (Max)	460W (Tc)
Package / Case	TO-264-3, TO-264AA
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube