FQP4N80

onsemi

Product No:

FQP4N80

Manufacturer:

Package:

TO-220-3

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Description:

MOSFET N-CH 800V 3.9A TO220-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	3.6Ohm @ 1.95A, 10V
Supplier Device Package	TO-220-3
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	800 V
Series	QFET®
Power Dissipation (Max)	130W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	FQP4