FQPF10N50CF

Fairchild Semiconductor

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FQPF10N50CF

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Package:

TO-220F-3

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Description:

POWER FIELD-EFFECT TRANSISTOR, 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2096 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	610mOhm @ 5A, 10V
Supplier Device Package	TO-220F-3
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	500 V
Series	FRFET®
Power Dissipation (Max)	48W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk