G800N06H

Goford Semiconductor

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G800N06H

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SOT-223

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Description:

N60V, 3A,RD<80M@10V,VTH0.7V~1.2V

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	457 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	80mOhm @ 3A, 10V
Supplier Device Package	SOT-223
Vgs(th) (Max) @ Id	1.2V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	1.2W (Tc)
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)