IMBG120R350M1HXTMA1

Infineon Technologies

Product No:

IMBG120R350M1HXTMA1

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Package:

PG-TO263-7-12

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Description:

SICFET N-CH 1.2KV 4.7A TO263

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	Standard
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	196 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	5.9 nC @ 18 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	468mOhm @ 2A, 18V
Supplier Device Package	PG-TO263-7-12
Vgs(th) (Max) @ Id	5.7V @ 1mA
Drain to Source Voltage (Vdss)	1200 V
Series	CoolSiC™
Power Dissipation (Max)	65W (Tc)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Vgs (Max)	+18V, -15V
Package	Tape & Reel (TR)
Base Product Number	IMBG120