IPA95R310PFD7XKSA1

Infineon Technologies

Product No:

IPA95R310PFD7XKSA1

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Package:

PG-TO220-3-313

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Description:

MOSFET N-CH 950V 8.7A TO220-3

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Operating Temperature	-55°C ~ 150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1765 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	310mOhm @ 10.4A, 10V
Supplier Device Package	PG-TO220-3-313
Vgs(th) (Max) @ Id	3.5V @ 520µA
Drain to Source Voltage (Vdss)	950 V
Series	CoolMOS™
Power Dissipation (Max)	31W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	8.7A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube