IPB049NE7N3GATMA1

Infineon Technologies

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IPB049NE7N3GATMA1

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Package:

PG-TO263-3

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Description:

MOSFET N-CH 75V 80A D2PAK

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In Stock : 1900

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4750 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	4.9mOhm @ 80A, 10V
Supplier Device Package	PG-TO263-3
Vgs(th) (Max) @ Id	3.8V @ 91µA
Drain to Source Voltage (Vdss)	75 V
Series	OptiMOS™
Power Dissipation (Max)	150W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPB049