IPB80N06S2L11ATMA2

Infineon Technologies

Product No:

IPB80N06S2L11ATMA2

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Package:

PG-TO263-3-2

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Description:

MOSFET N-CH 55V 80A TO263-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2075 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	10.7mOhm @ 40A, 10V
Supplier Device Package	PG-TO263-3-2
Vgs(th) (Max) @ Id	2V @ 93µA
Drain to Source Voltage (Vdss)	55 V
Series	OptiMOS™
Power Dissipation (Max)	158W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPB80N