IPI076N15N5AKSA1

Infineon Technologies

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IPI076N15N5AKSA1

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Package:

PG-TO262-3

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Description:

MV POWER MOS

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4700 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	7.6mOhm @ 56A, 10V
Supplier Device Package	PG-TO262-3
Vgs(th) (Max) @ Id	4.6V @ 160µA
Drain to Source Voltage (Vdss)	150 V
Series	OptiMOS™
Power Dissipation (Max)	214W (Tc)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	112A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Package	Tube
Base Product Number	IPI076