IPP026N10NF2SAKMA1

Infineon Technologies

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IPP026N10NF2SAKMA1

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Package:

PG-TO220-3

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Description:

TRENCH >=100V

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	154 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	2.6mOhm @ 100A, 10V
Supplier Device Package	PG-TO220-3
Vgs(th) (Max) @ Id	3.8V @ 169µA
Drain to Source Voltage (Vdss)	100 V
Series	StrongIRFET™ 2
Power Dissipation (Max)	3.8W (Ta), 250W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	27A (Ta), 184A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube
Base Product Number	IPP026N