IPP041N12N3GXKSA1

Infineon Technologies

Product No:

IPP041N12N3GXKSA1

Manufacturer:

Package:

PG-TO220-3

Batch:

Datasheet:

Description:

MOSFET N-CH 120V 120A TO220-3

Quantity:

Delivery:

Payment:

In Stock : 990

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	13800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs	211 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	4.1mOhm @ 100A, 10V
Supplier Device Package	PG-TO220-3
Vgs(th) (Max) @ Id	4V @ 270µA
Drain to Source Voltage (Vdss)	120 V
Series	OptiMOS™
Power Dissipation (Max)	300W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPP041