IPP16CN10NGXKSA1

Infineon Technologies

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IPP16CN10NGXKSA1

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Package:

PG-TO220-3

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Description:

MOSFET N-CH 100V 53A TO220-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3220 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Mounting Type	Through Hole
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	16.5mOhm @ 53A, 10V
Supplier Device Package	PG-TO220-3
Vgs(th) (Max) @ Id	4V @ 61µA
Drain to Source Voltage (Vdss)	100 V
Series	OptiMOS™
Power Dissipation (Max)	100W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	53A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPP16CN10