IPP60R299CPXKSA1

Infineon Technologies

Product No:

IPP60R299CPXKSA1

Manufacturer:

Package:

PG-TO220-3

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 11A TO220-3

Quantity:

Delivery:

Payment:

In Stock : 307

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Mounting Type	Through Hole
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	299mOhm @ 6.6A, 10V
Supplier Device Package	PG-TO220-3
Vgs(th) (Max) @ Id	3.5V @ 440µA
Drain to Source Voltage (Vdss)	650 V
Series	CoolMOS™
Power Dissipation (Max)	96W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPP60R299