IPT015N10NF2SATMA1

Infineon Technologies

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IPT015N10NF2SATMA1

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Package:

PG-HSOF-8

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Description:

MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	11000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	242 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.5mOhm @ 150A, 10V
Supplier Device Package	PG-HSOF-8
Vgs(th) (Max) @ Id	3.8V @ 267µA
Drain to Source Voltage (Vdss)	100 V
Series	StrongIRFET™ 2
Power Dissipation (Max)	3.8W (Ta), 300W (Tc)
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	35A (Ta), 315A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)