IPT111N20NFDATMA1

Infineon Technologies

Product No:

IPT111N20NFDATMA1

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Package:

PG-HSOF-8-1

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Description:

MOSFET N-CH 200V 96A 8HSOF

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7000 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	11.1mOhm @ 96A, 10V
Supplier Device Package	PG-HSOF-8-1
Vgs(th) (Max) @ Id	4V @ 267µA
Drain to Source Voltage (Vdss)	200 V
Series	OptiMOS™
Power Dissipation (Max)	375W (Tc)
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	96A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPT111