IQE050N08NM5CGATMA1

Infineon Technologies

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IQE050N08NM5CGATMA1

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Package:

PG-TTFN-9-1

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Description:

TRENCH 40<-<100V PG-TTFN-9

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	43.2 nC @ 10 V
Mounting Type	Surface Mount, Wettable Flank
Product Status	Active
Rds On (Max) @ Id, Vgs	5mOhm @ 20A, 10V
Supplier Device Package	PG-TTFN-9-1
Vgs(th) (Max) @ Id	3.8V @ 49µA
Drain to Source Voltage (Vdss)	80 V
Series	OptiMOS™
Power Dissipation (Max)	2.5W (Ta), 100W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	16A (Ta), 101A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	IQE050N