IRF540NLPBF

Infineon Technologies

Product No:

IRF540NLPBF

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Package:

TO-262

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Description:

MOSFET N-CH 100V 33A TO262

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	44mOhm @ 16A, 10V
Supplier Device Package	TO-262
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	HEXFET®
Power Dissipation (Max)	130W (Tc)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRF540