IRFI4229PBF

Infineon Technologies

Product No:

IRFI4229PBF

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Package:

TO-220AB

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Description:

MOSFET N-CH 250V 19A TO220AB

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Mounting Type	Through Hole
Product Status	Last Time Buy
Rds On (Max) @ Id, Vgs	46mOhm @ 11A, 10V
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	250 V
Series	HEXFET®
Power Dissipation (Max)	46W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRFI4229