ISZ034N06LM5ATMA1

Infineon Technologies

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ISZ034N06LM5ATMA1

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Package:

PG-TSDSON-8-26

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Description:

MOSFET N-CH 60V 19A/112A TSDSON

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3500 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	53 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	3.4mOhm @ 20A, 10V
Supplier Device Package	PG-TSDSON-8-26
Vgs(th) (Max) @ Id	2.3V @ 36µA
Drain to Source Voltage (Vdss)	60 V
Series	OptiMOS™ 5
Power Dissipation (Max)	2.5W (Ta), 83W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	19A (Ta), 112A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	ISZ034N