IXFN120N65X2

IXYS

Product No:

IXFN120N65X2

Manufacturer:

Package:

SOT-227B

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Description:

MOSFET N-CH 650V 108A SOT227B

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	15500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	225 nC @ 10 V
Mounting Type	Chassis Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	24mOhm @ 54A, 10V
Supplier Device Package	SOT-227B
Vgs(th) (Max) @ Id	5.5V @ 8mA
Drain to Source Voltage (Vdss)	650 V
Series	HiPerFET™, Ultra X2
Power Dissipation (Max)	890W (Tc)
Package / Case	SOT-227-4, miniBLOC
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	108A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFN120