IXTY1R6N50D2

IXYS

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IXTY1R6N50D2

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Package:

TO-252AA

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Description:

MOSFET N-CH 500V 1.6A TO252

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	23.7 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	2.3Ohm @ 800mA, 0V
Supplier Device Package	TO-252AA
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	500 V
Series	Depletion
Power Dissipation (Max)	100W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube
Base Product Number	IXTY1