NTH4L015N065SC1

onsemi

Product No:

NTH4L015N065SC1

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Package:

TO-247-4L

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Description:

SILICON CARBIDE MOSFET, NCHANNEL

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4790 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs	283 nC @ 18 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	18mOhm @ 75A, 18V
Supplier Device Package	TO-247-4L
Vgs(th) (Max) @ Id	4.3V @ 25mA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	500W (Tc)
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	142A (Tc)
Vgs (Max)	+22V, -8V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube