PBSS5130QAZ

NXP Semiconductors

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PBSS5130QAZ

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Package:

DFN1010D-3

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Description:

SMALL SIGNAL BIPOLAR TRANSISTOR

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Operating Temperature	150°C (TJ)
Frequency - Transition	170MHz
Current - Collector (Ic) (Max)	1 A
Vce Saturation (Max) @ Ib, Ic	240mV @ 100mA, 1A
Mounting Type	Surface Mount
Product Status	Obsolete
Voltage - Collector Emitter Breakdown (Max)	30 V
Supplier Device Package	DFN1010D-3
Series	-
Transistor Type	PNP
Package / Case	3-XDFN Exposed Pad
Power - Max	325 mW
Mfr	NXP Semiconductors
Current - Collector Cutoff (Max)	100nA
Package	Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce	250 @ 100mA, 2V