PMEG2010BELD,315

NXP Semiconductors

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PMEG2010BELD,315

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DFN1006-2

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Description:

NEXPERIA PMEG2010BELD - RECTIFIE

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	1.6 ns
Capacitance @ Vr, F	40pF @ 1V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	DFN1006-2
Current - Reverse Leakage @ Vr	200 µA @ 20 V
Series	-
Package / Case	SOD-882
Technology	Schottky
Voltage - Forward (Vf) (Max) @ If	490 mV @ 1 A
Mfr	NXP Semiconductors
Voltage - DC Reverse (Vr) (Max)	20 V
Package	Bulk
Operating Temperature - Junction	150°C (Max)
Current - Average Rectified (Io)	1A