PMV33UPE,215

NXP Semiconductors

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PMV33UPE,215

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SOT-23

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Description:

PMV33UPE - 20 V, SINGLE P-CHANNE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1820 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	22.1 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	36mOhm @ 3A, 4.5V
Supplier Device Package	SOT-23
Vgs(th) (Max) @ Id	950mV @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	490mW (Ta)
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	4.4A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Bulk