PMZB1200UPEYL

NXP Semiconductors

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PMZB1200UPEYL

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Package:

DFN1006B-3

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Description:

NEXPERIA PMZB1200U - 30V, P-CHAN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	43.2 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	1.2 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.4Ohm @ 410mA, 4.5V
Supplier Device Package	DFN1006B-3
Vgs(th) (Max) @ Id	950mV @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	310mW (Ta), 1.67W (Tc)
Package / Case	3-XFDFN
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	410mA (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Bulk