PSMN6R3-120PS

NXP Semiconductors

Product No:

PSMN6R3-120PS

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Package:

TO-220AB

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Description:

PSMN6R3-120PS - N-CHANNEL 120V S

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	11384 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs	207.1 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	6.7mOhm @ 25A, 10V
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	120 V
Series	-
Power Dissipation (Max)	405W (Ta)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	70A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk