PSMN8R5-100ESQ

NXP USA Inc.

Product No:

PSMN8R5-100ESQ

Manufacturer:

Package:

I2PAK

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Description:

POWER FIELD-EFFECT TRANSISTOR, 1

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In Stock : 975

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5512 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	111 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	8.5mOhm @ 25A, 10V
Supplier Device Package	I2PAK
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	263W (Tc)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C	100A (Tj)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk