RD0106T-H

onsemi

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RD0106T-H

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DIODE GEN PURP 600V 1A TP

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	50 ns
Capacitance @ Vr, F	-
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	TP
Current - Reverse Leakage @ Vr	10 µA @ 600 V
Series	-
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 1 A
Mfr	onsemi
Voltage - DC Reverse (Vr) (Max)	600 V
Package	Bulk
Operating Temperature - Junction	150°C (Max)
Current - Average Rectified (Io)	1A