RF1S50N06LESM

Harris Corporation

Product No:

RF1S50N06LESM

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Package:

TO-263AB

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Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	22mOhm @ 50A, 5V
Supplier Device Package	TO-263AB
Vgs(th) (Max) @ Id	2V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	142W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Harris Corporation
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	5V
Package	Bulk