RFD8P06LE

Fairchild Semiconductor

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RFD8P06LE

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Package:

I-PAK

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Description:

P-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	675 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	300mOhm @ 8A, 5V
Supplier Device Package	I-PAK
Vgs(th) (Max) @ Id	2V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	48W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 5V
Package	Bulk