RFN10NS3STL

Rohm Semiconductor

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RFN10NS3STL

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Package:

LPDS

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Description:

DIODE GEN PURP 350V 10A LPDS

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	30 ns
Capacitance @ Vr, F	-
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	LPDS
Current - Reverse Leakage @ Vr	10 µA @ 350 V
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.5 V @ 10 A
Mfr	Rohm Semiconductor
Voltage - DC Reverse (Vr) (Max)	350 V
Package	Tape & Reel (TR)
Operating Temperature - Junction	150°C
Current - Average Rectified (Io)	10A
Base Product Number	RFN10