RFN1L6SDDTE25

Rohm Semiconductor

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RFN1L6SDDTE25

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Package:

PMDS

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Description:

DIODE GEN PURP 600V 800MA PMDS

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	35 ns
Capacitance @ Vr, F	-
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	PMDS
Current - Reverse Leakage @ Vr	1 µA @ 600 V
Series	Automotive, AEC-Q101
Package / Case	DO-214AC, SMA
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.45 V @ 800 mA
Mfr	Rohm Semiconductor
Voltage - DC Reverse (Vr) (Max)	600 V
Package	Tape & Reel (TR)
Operating Temperature - Junction	150°C
Current - Average Rectified (Io)	800mA
Base Product Number	RFN1L6